iBasso AMP17 | GaN + Discrete Transistor Amp Card for DX340
iBasso's AMP17 is the First Application of Gallium Nitride in the Design For Portable Headphone Amps, Designed For Use With the DX300 Series
- GaN FETs and discrete transistors for higher switching speed and lower power loss
- External 12V DC power supply
- Support for the DX340, DX300 and DX320
- Improved efficiency, power delivery, and transient response
- 4.4mm balanced PO + LO outputs
Heralding a New Era of Portable GaN Application
In the realm of high-end portable audio devices, iBasso once again leads the industry. The AMP17 marks the first application of gallium nitride (GaN) in the design for portable headphone amplifiers.
Compared to traditional MOSFETs or bipolar transistors, GaNFETs boast an electron mobility of up to 2000 cm/V•s, enabling higher electron velocities and lower conduction losses at high frequencies.
The total Miller charge (QGD) of GaNFETs is significantly lower than that of power MOSFETs with equivalent on-resistance. This characteristic facilitates faster switching speeds, which, when employed in audio amplifiers, results in enhanced transient response, dynamic range, and absolute control precision.
High Current Output and Low Internal Resistance
GaNFET features exceptionally low internal resistance, allowing for higher drive currents. Coupled with the AMP17's low output impedance architecture, this enables precise driving of various low-impedance headphones, delivering a sound that is layered, dynamic, and highly detailed. Even under complex, high-encoding or high-intensity transient signals, the AMP17 remains rock solid, maintaining complete detail, clear rhythm, and delivering an experience that is both stable and impactful.
Significant Suppression of Ripple Interference
Gallium nitrides support higher operating frequencies, endowing the AMP17 with an expansive, responsive, frequency bandwidth. Even the finest high-frequency details are faithfully reproduced. Compared to traditional headphone amplifier solutions, the integration of GaNs markedly reduces interference caused by inductor ripple currents on the audio signal. The resulting imaging is crisp, analog, and naturally articulated.
Rapid Response and Reduced Distortion
GaN switch speeds surpass those of conventional silicon-based MOSFETs by several tens of times. This advantage allows the AMP17 to achieve near seamless zero-cross switching. The output waveform approaches an ideal form, rendering the tonal quality more transparent and natural. Under such low-distortion conditions, musical nuances emerge vividly, with every delicate emotional detail precisely restored, delivering an immense and immersive listening experience.
Power Supply
Building upon iBasso's latest generation of external power supply designs, the AMP17 supports a 12V DC input. In super-gain mode, it unleashes AMP17's full potential, delivering a formidable output power of 1900mW + 1900mW at 320. Whether driving full-size dynamic headphones or flagship lEMs, the AMP17 provides a rich, powerful sound. Its transient response is swift, and the bass is deep, rich, and impactful.
Full Support for DX300 Series
The AMP17 not only supports the DX340 but is also compatible with the DX300 and DX320 players. The familiar operational logic remains unchanged, giving the impression that nothing has altered; however, the sound quality has undergone a comprehensive evolution.
Note: The DX300 and DX320 do not support external 12V DC power supply.
Specifications
4.4mm Balanced PO Output
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THD+N
- 116dB (No load)
- -110dB (600 ohms load)
- Dynamic Range: 120dB
- SNR: 122dB
- Crosstalk: -117dB
- Frequency Response: 10Hz-40kHz (+/- 0.5dB)
- Output Impedance: 1.1 ohms
- Output Power: 1030mW + 1030mW@32 ohms (Battery powered)
- Output Power: 1900mW + 1900mW@32 ohms (12V DC Power supply)
4.4mm Balanced LO Output
- THD+N: -116 (No load)
- Dynamic Range: 126dB
- SNR: 123dB
- Crosstalk: -97dB
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Output Level
- 1.6Vrms (Low gain)
- 2.6Vrms (Mid gain)
- 3Vrms (High gain)
In the Box
- iBasso AMP17 card
- Warranty card
- Screw driver
- Screws
